Effects of irradiation on the mechanical behavior of twined SiC nanowires

被引:8
作者
Jin, Enze [1 ]
Niu, Li-Sha [1 ]
Lin, Enqiang [1 ]
Duan, Zheng [1 ]
机构
[1] Tsinghua Univ, Dept Engn Mech, AML, Beijing 100084, Peoples R China
关键词
ION IRRADIATION; DEFECT PRODUCTION; SILICON; ELASTICITY; STRENGTH; TENSILE; SIZE;
D O I
10.1063/1.4795162
中图分类号
O59 [应用物理学];
学科分类号
摘要
Irradiation is known to bring new features in one-dimensional nano materials. In this study, we used molecular dynamics simulations to investigate the irradiation effects on twined SiC nanowires. Defects tend to accumulate from outside toward inside of the twined SiC nanowires with increasing irradiation dose, leading to a transition from brittle to ductile failure under tensile load. Atomic chains are formed in the ductile failure process. The first-principles calculations show that most of the atomic chains are metallic. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795162]
引用
收藏
页数:9
相关论文
共 45 条
[1]   Investigations of heavy ion irradiation of gallium nitride nanowires and nanocircuits [J].
Ayres, V. M. ;
Jacobs, B. W. ;
Englund, M. E. ;
Carey, E. H. ;
Crimp, M. A. ;
Ronningen, R. M. ;
Zeller, A. F. ;
Halpern, J. B. ;
He, M. -Q. ;
Harris, G. L. ;
Liu, D. ;
Shaw, H. C. ;
Petkov, M. P. .
DIAMOND AND RELATED MATERIALS, 2006, 15 (4-8) :1117-1121
[2]   First-principles study of defects and adatoms in silicon carbide honeycomb structures [J].
Bekaroglu, E. ;
Topsakal, M. ;
Cahangirov, S. ;
Ciraci, S. .
PHYSICAL REVIEW B, 2010, 81 (07)
[3]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[4]   Displacement threshold energies in β-SiC [J].
Devanathan, R ;
de la Rubia, TD ;
Weber, WJ .
JOURNAL OF NUCLEAR MATERIALS, 1998, 253 :47-52
[5]   Atomic scale simulation of defect production in irradiated 3C-SiC [J].
Devanathan, R ;
Weber, WJ ;
Gao, F .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) :2303-2309
[6]  
Fei G., 2004, PHYS REV B, V69
[7]   COMPUTATION OF RING STATISTICS FOR NETWORK MODELS OF SOLIDS [J].
FRANZBLAU, DS .
PHYSICAL REVIEW B, 1991, 44 (10) :4925-4930
[8]   Cascade overlap and amorphization in 3C-SiC: Defect accumulation, topological features, and disordering [J].
Gao, F ;
Weber, WJ .
PHYSICAL REVIEW B, 2002, 66 (02) :1-10
[9]   Atomic-level study of ion-induced nanoscale disordered domains in silicon carbide [J].
Gao, F ;
Weber, WJ .
APPLIED PHYSICS LETTERS, 2003, 82 (06) :913-915
[10]   The key role of nanoscale surface facets on the mechanical strength and failure of wurtzite and periodically twinned zinc-blende nanowires [J].
Grantab, Rassin ;
Shenoy, Vivek B. .
PHILOSOPHICAL MAGAZINE LETTERS, 2011, 91 (04) :280-286