Induced defects in ZnSe and ZnTe by electron and proton irradiation and defect-annealing behaviour

被引：0
|
作者：
Puff, W
Brunner, S
Balogh, AG
Mascher, P
机构：
[1] Graz Tech Univ, Inst Tech Phys, A-8010 Graz, Austria
[2] Tech Hoschsch Darmstadt, Dept Mat Sci, D-64287 Darmstadt, Germany
[3] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2002年 / 229卷 / 01期
关键词：
D O I：
10.1002/1521-3951(200201)229:1<329::AID-PSSB329>3.0.CO;2-G
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing in ZnSe and ZnTe. The nominally undoped samples were irradiated either with 1 MeV or 2 MeV electrons or with 3 MeV protons. The investigation was performed with positron lifetime and Doppler-broadening measurements.
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收藏
页码：329 / 332
页数：4
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