Ambipolar carrier transport in polycrystalline pentacene thin-film transistors

被引：25

作者：

Yasuda, T ^{[1
]}

Goto, T ^{[1
]}

Fujita, K ^{[1
]}

Tsutsui, T ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Engn Sci, Dept Appl Sci Elect & Mat, Kasuga, Fukuoka 8168580, Japan

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2006年 / 444卷

关键词：

mobility; organic semiconductor; pentacene; transistor; work function;

D O I：

10.1080/15421400500364998

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have investigated the dependence of polycrystalline pentacene thin-film transistors (TFTs) characteristics on work function of source-drain contact metals. The pentacene TFTs using Mg, Al, Ag, and Au source-drain electrodes showed only p-type characteristics and the field-effect hole mobilities were strongly dependent on their work function. On the other hand, the pentacene TFTs using Ca source-drain electrodes showed typical ambipolar characteristics. The field-effect hole mobility of 4.5 x 10(-4) cm(2)/Vs and field-effect electron mobility of 2.7 x 10(-5) cm(2)/Vs were estimated from saturation currents. Appearance of an electron enhancement mode in pentacene TFTs was ascribed to the lowering of barrier for electron injection at source electrodes.

引用

收藏

页码：219 / 224

页数：6

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