Strong in-plane optical anisotropy of asymmetric (001) quantum wells

被引：17

作者：

Chen, YH ^{[1
]}

Ye, XL ^{[1
]}

Xu, B ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2192150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is well known that asymmetry in the (001) direction can induce in-plane optical anisotropy (IPOA) in (001) quantum wells (QWs). In this letter, asymmetry is introduced in (001) GaAs/AlGaAs QWs by inserting 1 ML (monolayer) of InAs or AlAs at interfaces. Strong IPOA, which is comparable to that in the InGaAs/InP QWs with no common atom, is observed in the asymmetric GaAs/AlGaAs QW by reflectance difference spectroscopy. (C) 2006 American Institute of Physics.

引用

页数：3

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