Surface Modification of a Polyimide Gate Insulator with an Yttrium Oxide Interlayer for Aqueous-Solution-Processed ZnO Thin-Film Transistors

被引：26

作者：

Jang, Kwang-Suk ^{[1
]}

Wee, Duyoung ^{[1
]}

Kim, Yun Ho ^{[1
]}

Kim, Jinsoo ^{[1
]}

Ahn, Taek ^{[2
]}

Ka, Jae-Won ^{[1
]}

Yi, Mi Hye ^{[1
]}

机构：

[1] Korea Res Inst Chem Technol, Div Adv Mat, Taejon 305600, South Korea

[2] Kyungsung Univ, Dept Chem, Pusan 608736, South Korea

来源：

LANGMUIR | 2013年 / 29卷 / 23期

关键词：

HIGH-PERFORMANCE; LOW-TEMPERATURE; LOW-VOLTAGE; DOPED ZNO; SOL-GEL; SPECTROSCOPY;

D O I：

10.1021/la401356u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report a simple approach to modify the surface of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. It is expected that the yttrium oxide interlayer will provide a surface that is more chemically compatible with the ZnO semiconductor than is bare polyimde. The field-effect mobility and the on/off current ratio of the ZnO TFT with the YOx/polyimide gate insulator were 0.456 cm(2)/V.s and 2.12 X 10(6), respectively, whereas the ZnO TFT with the polyimide gate insulator was inactive.

引用

页码：7143 / 7150

页数：8

共 34 条

[1] Hybridization of a low-temperature processable polyimide gate insulator for high performance pentacene thin-film transistors [J].

Ahn, Taek ;

Kim, Jin Woo ;

Choi, Yoojeong ;

Yi, Mi Hye .

ORGANIC ELECTRONICS, 2008, 9 (05) :711-720

[2] Solution-processed HafSOx and ZircSOx inorganic thin-film dielectrics and nanolaminates [J].

Anderson, Jeremy T. ;

Munsee, Craig L. ;

Hung, Celia M. ;

Phung, Tran M. ;

Herman, Gregory S. ;

Johnson, David C. ;

Wager, John F. ;

Keszler, Douglas A. .

ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (13) :2117-2124

[3] Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors [J].

Avis, Christophe ;

Kim, Youn Goo ;

Jang, Jin .

JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (34) :17415-17420

[4] High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol-gel method [J].

Avis, Christophe ;

Jang, Jin .

JOURNAL OF MATERIALS CHEMISTRY, 2011, 21 (29) :10649-10652

[5] Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process [J].

Banger, K. K. ;

Yamashita, Y. ;

Mori, K. ;

Peterson, R. L. ;

Leedham, T. ;

Rickard, J. ;

Sirringhaus, H. .

NATURE MATERIALS, 2011, 10 (01) :45-50

[6] High-mobility low-temperature ZnO transistors with low-voltage operation [J].

Bong, Hyojin ;

Lee, Wi Hyoung ;

Lee, Dong Yun ;

Kim, Beom Joon ;

Cho, Jeong Ho ;

Cho, Kilwon .

APPLIED PHYSICS LETTERS, 2010, 96 (19)

[7] Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method [J].

Cheng, Hua-Chi ;

Chen, Chia-Fu ;

Tsay, Chien-Yie .

APPLIED PHYSICS LETTERS, 2007, 90 (01)

[8] Novel Zinc Oxide Inks with Zinc Oxide Nanoparticles for Low-Temperature, Solution-Processed Thin-Film Transistors [J].

Cho, Song Yun ;

Kang, Young Hun ;

Jung, Jun-Young ;

Nam, So Youn ;

Lim, Jongsun ;

Yoon, Sung Cheol ;

Choi, Dong Hoon ;

Lee, Changjin .

CHEMISTRY OF MATERIALS, 2012, 24 (18) :3517-3524

[9]

Crist V.B., 2004, HDB MONOCHROMATIC XP

[10] Characterization of indium-tin oxide interfaces using X-ray photoelectron spectroscopy and redox processes of a chemisorbed probe molecule: Effect of surface pretreatment conditions [J].

Donley, C ;

Dunphy, D ;

Paine, D ;

Carter, C ;

Nebesny, K ;

Lee, P ;

Alloway, D ;

Armstrong, NR .

LANGMUIR, 2002, 18 (02) :450-457

← 1 2 3 4 →