Performance and Optimization of a 50 kV Silicon Carbide Photoconductive Semiconductor Switch for Pulsed Power Applications

被引：0

作者：

Hettler, Cameron ^{[1
]}

Sullivan, William W., III ^{[1
]}

Dickens, James ^{[1
]}

Neuber, Andreas ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

来源：

PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL POWER MODULATOR AND HIGH VOLTAGE CONFERENCE | 2012年

关键词：

Photoconductive semiconductor switch; silicon carbide; high voltage switch;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 50 kV silicon carbide photoconductive semiconductor switch (PCSS) is presented. The SiC PCSS device is fabricated from semi-insulating 4H-SiC in a newly-proposed rear-illuminated, radial switch structure. The improved structure reduces the peak electric field within the switch, extending the blocking voltage to over 50 kVdc. Electrostatic field simulations of the PCSS are presented along with experimental blocking curves. The PCSS demonstrated low on-state resistance, delivering over 27 MW of peak power into a 31 Omega load. Device modeling was performed to further optimize the switch for peak efficiency when illuminated with 355 nm light, a common laser wavelength. The switch structure was modified for peak operation at 355 nm and the experimental and theoretical results are compared.

引用

页码：70 / 72

页数：3

共 50 条

[41] Characterization of a semi-insulating GaAs photoconductive semiconductor switch for ultrawide band high power microwave applications
Islam, NE
Schamiloglu, E
Fleddermann, CB
APPLIED PHYSICS LETTERS, 1998, 73 (14) : 1988 - 1990
[42] Silicon carbide for microwave power applications
Brylinski, C
DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1405 - 1413
[43] Silicon carbide devices for power applications
Clarke, RC
PROCEEDINGS OF THE 2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2001, : 124 - 124
[44] Silicon carbide for microwave power applications
Thomson CSF LCR, Domaine de Corbeville, 91404 Orsay, Cedex, France
Diamond Relat. Mat., 10 (1405-1413):
[45] Silicon carbide JFET - fast, high voltage semiconductor device for power electronics applications
Rabkowski, Jacek
PRZEGLAD ELEKTROTECHNICZNY, 2009, 85 (04): : 205 - 208
[46] Power Electronics Innovation by Silicon Carbide Power Semiconductor Devices
Okumura, Hajime
2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2014,
[47] 3.3kV-Silicon-Silicon Carbide-Topology-Hybrid-Switch for High Power Resonant ZVS Inverters - Optimisation of the Power Losses
Meissner, Michael
Hoffmann, Klaus F.
2021 23RD EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'21 ECCE EUROPE), 2021,
[48] Design of an 80kV, 40A Resonant Switch Mode Power Supply for Pulsed Power Applications
Nonn, Paul D.
Seltzman, Andrew H.
Anderson, Jay K.
PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL POWER MODULATOR AND HIGH VOLTAGE CONFERENCE, 2012, : 84 - 87
[49] The Effects of Sub-Contact Nitrogen Doping on Silicon Carbide Photoconductive Semiconductor Switches
Sullivan, William, III
Hettler, Cameron
Dickens, James
PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL POWER MODULATOR AND HIGH VOLTAGE CONFERENCE, 2012, : 77 - 79
[50] Study on Output Characteristics of 20 kV/100 ns Nonlinear GaAs Photoconductive Semiconductor Switch
Wu, Meilin
Shi, Wei
IEEE ACCESS, 2023, 11 : 9197 - 9201

← 1 2 3 4 5 →