High power 1.5 μm integrated superluminescent light source with tilted ridge waveguide

被引：1

作者：

Liu, Y ^{[1
]}

Song, JF

Zeng, YP

Wu, B

Zhang, YT

Qian, Y

Sun, YZ

Du, GT

机构：

[1] Jilin Univ, State Key Lab Integrated Optoelect, Dept Elect Engn, Changchun 130023, Peoples R China

[2] Jilin Univ, Inst Posts & Telecommun, Changchun 130020, Peoples R China

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2001年 / 33卷 / 12期

关键词：

monolithic integration; multiwavelength light source; ridge waveguide; semiconductor optical amplifier; spectrum slicing; superluminescent diode; wavelength division multiplexing;

D O I：

10.1023/A:1013318426338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to further suppress the F-P lasing and increase the superluminescent power, the tilted ridge waveguide was introduced to the integrated superluminescent device [monolithic integration of the superluminescent diode (SLD) with semiconductor optical amplifier (SOA)]. By this means, high power 1.5 mum integrated superluminescent light source has been fabricated without anti-reflection (AR) coating. The F-P oscillations between the two cleaved facets were suppressed successfully compared with the device without ridge waveguide. More than 200 mW peak pulsed power was obtained under quasi-CW condition (0.1 ms pulse width, 10% duty cycle) by co-operation of the two integrated sections. The spectral FWHM is 25 nm.

引用

页码：1233 / 1239

页数：7

共 32 条

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