Microwave-modulated Shubnikov-de Haas oscillations in a two-dimensional GaN electron gas

被引：4

作者：

Hang, DR

Juang, JR

Huang, TY

Liang, CT ^{[1
]}

Hung, WK

Chen, YF

Kim, GH

Lee, Y

Lee, JH

Huang, CF

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Mat Sci & Optoelect Engn, Kaohsiung 804, Taiwan

[3] Natl Taiwan Univ Technol, Dept Electroopt Engn, Taipei, Taiwan

[4] Sungkyunkwan Univ, Dept Elect & Elect Engn, Suwon 440760, South Korea

[5] Kyungpook Natl Univ, Sch Elect & Elect Engn, Taegu 702701, South Korea

[6] Ind Technol Res Inst, Ctr Measurement Stand, Natl Measurement Lab, Hsinchu 300, Taiwan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 22卷 / 1-3期

关键词：

GaN; microwave; Shubnikov-de Hass;

D O I：

10.1016/j.physe.2003.12.074

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the drastic enhancement of Shubnikov-de Haas (SdH) oscillations observed in a GaN/AlGaN heterostructure by microwave modulation. The dependence of the SdH pattern on microwave power and temperature are investigated. The underlying mechanism is attributed to the effect of carrier heating. This technique helps study the transport properties of two-dimensional electrons in a GaN/AlGaN heterostructure. In addition, this method has the advantage of keeping the carrier concentration fixed and not requiring expensive high-energy laser facilities compared with carrier-modulated SdH measurements. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：578 / 581

页数：4

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