Near-field detection of photon emission from silicon with 30 nm spatial resolution

被引：3

作者：

Isakov, D. ^{[1
]}

Tio, A. A. B. ^{[2
]}

Geinzer, T. ^{[3
]}

Phang, J. C. H. ^{[1
]}

Zhang, Y. ^{[2
]}

Balk, L. J. ^{[3
]}

机构：

[1] Natl Univ Singapore, CICFAR, Singapore 117576, Singapore

[2] Singapore Inst Mfg Technol, Precis Measurements Grp, Singapore, Singapore

[3] Univ Wuppertal, Fac Elect Informat & Media Engn, Wuppertal, Germany

来源：

MICROELECTRONICS RELIABILITY | 2008年 / 48卷 / 8-9期

关键词：

D O I：

10.1016/j.microrel.2008.07.021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a scanning near-field photon emission microscope (SNPEM) for monitoring photon emission sites with spatial resolution beyond the diffraction limit. Success of SNPEM analysis strongly depends on the sensitivity of photon emission detection. We show that scattering dielectric probe (SDP) is capable of providing both Sub-100 nm resolution and compatible sensitivity at emission wavelengths between 1 mu m and 1.4 mu m. We propose a two step fabrication method which avoids any metal coating and ensures repeatability of parameters of different probes. We also predict that fabrication of SDP from a multi-mode fiber instead of a single mode fiber can significantly improve the collection efficiency of the probe. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1285 / 1288

页数：4

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