Electrical characterization of partially relaxed InxGa1-xAs/GaAs multiple quantum well structures

被引：8

作者：

Moon, CR ^{[1
]}

Kim, I ^{[1
]}

Lee, JS ^{[1
]}

Choe, BD ^{[1
]}

Kwon, SD ^{[1
]}

Lim, H ^{[1
]}

机构：

[1] AJOU UNIV,DEPT PHYS,SUWON 442749,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 24期

关键词：

D O I：

10.1063/1.118428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electronic properties of partially relaxed In-x Ga1-x As/GaAs multiple quantum well (MQW) structures are investigated using capacitance-voltage (C-V) profiling and deep level transient spectroscopy (DLTS). As the In composition becomes large, the depletion of carriers confined in QWs and the concentration of dislocation-related deep traps are increased. The carrier depletion is observed to occur predominantly in the QWs adjacent to the bottom layer. This depletion is believed to be due to electron capture at the acceptor-like misfit dislocation-related traps. Our results thus show that the C-V and DLTS measurements, combined with the numerical simulation of C-V profiles, can be used to study the influence of nonuniformly distributed misfit dislocations on the carrier distribution in MQW structures. (C) 1997 American Institute of Physics.

引用

页码：3284 / 3286

页数：3

共 18 条

[1] INTERFACE STATES GENERATED BY HEAT-TREATMENT IN AU/INGAP SCHOTTKY DIODES [J].