Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon

被引：393

作者：

Ferrari, AC ^{[1
]}

Kleinsorge, B

Morrison, NA

Hart, A

Stolojan, V

Robertson, J

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB2 1PZ, England

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 10期

关键词：

D O I：

10.1063/1.370531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon (ta-C) on Si has been carried out. Complete stress relief occurs at 600-700 degrees C and is accompanied by minimal structural modifications, as indicated by electron energy loss spectroscopy, Raman spectroscopy, and optical gap measurements. Further annealing in vacuum converts sp(3) sites to sp(2) with a drastic change occurring after 1100 degrees C. The field emitting behavior is substantially retained up to the complete stress relief, confirming that ta-C is a robust emitting material. (C) 1999 American Institute of Physics. [S0021-8979(99)05910-1].

引用

页码：7191 / 7197

页数：7

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