Metal Oxide Nanoparticle Growth on Graphene via Chemical Activation with Atomic,Oxygen

被引:32
作者
Johns, James E. [1 ,4 ]
Alaboson, Justice M. P. [1 ]
Patwardhan, Sameer [3 ]
Ryder, Christopher R. [1 ]
Schatz, George C. [2 ,3 ]
Hersam, Mark C. [1 ,2 ,4 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[3] Northwestern Univ, Argonne Northwestern Solar Energy Res ANSER Ctr, Evanston, IL 60208 USA
[4] Northwestern Univ, Dept Med, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
ATOMIC LAYER DEPOSITION; REDUCTION; HYBRID; DIELECTRICS; COMPOSITES; CHEMISTRY; GRAPHITE; TIO2;
D O I
10.1021/ja408248z
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Chemically interfacing the inert basal plane of graphene with other materials has limited the development of graphene-based catalysts, composite materials, and devices. Here, we overcome this limitation by chemically activating epitaxial graphene on SiC(0001) using atomic oxygen. Atomic oxygen produces epoxide groups on graphene, which act as reactive nucleation sites for zinc oxide nanoparticle growth using the atomic layer deposition precursor diethyl zinc. In particular, exposure of epoxidized graphene to diethyl zinc abstracts oxygen, creating mobile species,that diffuse on the surface to form metal oxide clusters. This mechanism is corroborated with a combination of scanning probe microscopy, Raman spectroscopy, and density functional theory and can likely be generalized to a wide variety of related surface reactions on graphene.
引用
收藏
页码:18121 / 18125
页数:5
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