A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

被引：5
作者：
Aroutiounian, V. M.
Avetisyan, G. A.
Buniatyan, V. V.
Soukiassian, P. G.
Buniatyan, Vaz. V.
机构：
[1] Yerevan State Univ, Yerevan 375025, Armenia
[2] State Engn Univ Armenia, Yerevan 375009, Armenia
[3] Univ Paris Sud Orsay, CEA, Lab Surfaces & Interfaces Mat Avances, DSM DRECAM SPCSI, F-91191 Gif Sur Yvette, France
来源：
APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 15期
关键词：
field effect transistor; deep levels; traps; noise characteristic; Schottky barrier;
D O I：
10.1016/j.apsusc.2005.12.050
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Noise characteristics of silicon carbide Schottky barrier field effect transistors (MESFET) are examined for the case of the operation in small-signal regime and the presence of deep impurity levels and electron traps in the band gap of the channel. A new model of calculations of noise is suggested. It is shown that the noise measure of the short channel MESFET can be decreased within certain high frequency range. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：5445 / 5448
页数：4
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