Static, pulsed and frequency-dependent current/voltage characteristics of GaAs FETs

被引：0
|
作者：
Tellez, JR
Stothard, BP
AlDaas, M
机构：
[1] Univ of Bradford, Bradford, United Kingdom
来源：
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1996年 / 143卷 / 03期
关键词：
gallium arsenide devices; field-effect transistors; frequency-dispersion effects; MESFETs;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurements are performed on a variety of GaAs MESFET devices to show that the observed differences between the static and pulsed current/voltage characteristics do not arise entirely from self-heating effects. The results show that a significant reason for the differences arises from frequency-dispersion effects. The data presented show the relationship between temperature, bias and frequency.
引用
收藏
页码：129 / 133
页数：5
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