Topological surface transport in epitaxial SnTe thin films grown on Bi2Te3

被引:113
作者
Taskin, A. A. [1 ]
Yang, Fan [1 ]
Sasaki, Satoshi [1 ]
Segawa, Kouji [1 ]
Ando, Yoichi [1 ]
机构
[1] Osaka Univ, Inst Sci & Ind Res, Osaka, Ibaraki 5670047, Japan
关键词
CRYSTALLINE INSULATOR; EXPERIMENTAL REALIZATION; CARRIER-CONCENTRATION; QUANTUM OSCILLATIONS; PHASE-TRANSITION; STATES;
D O I
10.1103/PhysRevB.89.121302
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov-de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin.
引用
收藏
页数:5
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