Topological surface transport in epitaxial SnTe thin films grown on Bi2Te3

被引：113

作者：

Taskin, A. A. ^{[1
]}

Yang, Fan ^{[1
]}

Sasaki, Satoshi ^{[1
]}

Segawa, Kouji ^{[1
]}

Ando, Yoichi ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka, Ibaraki 5670047, Japan

来源：

PHYSICAL REVIEW B | 2014年 / 89卷 / 12期

关键词：

CRYSTALLINE INSULATOR; EXPERIMENTAL REALIZATION; CARRIER-CONCENTRATION; QUANTUM OSCILLATIONS; PHASE-TRANSITION; STATES;

D O I：

10.1103/PhysRevB.89.121302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov-de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin.

引用

页数：5

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