Etched graphene quantum dots on hexagonal boron nitride

被引：41

作者：

Engels, S. ^{[1
,2
,3
]}

Epping, A. ^{[1
,2
,3
]}

Volk, C. ^{[1
,2
,3
]}

Korte, S. ^{[3
]}

Voigtlaender, B. ^{[3
]}

Watanabe, K. ^{[4
]}

Taniguchi, T. ^{[4
]}

Trellenkamp, S. ^{[3
]}

Stampfer, C. ^{[1
,2
,3
]}

机构：

[1] Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany

[2] Rhein Westfal TH Aachen, Inst Phys 2, D-52074 Aachen, Germany

[3] Forschungszentrum Julich, Peter Grunberg Inst PGI 3 9, D-52425 Julich, Germany

[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 07期

关键词：

SINGLE-ELECTRON TRANSISTOR; BILAYER GRAPHENE; CONFINEMENT; DEVICES;

D O I：

10.1063/1.4818627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9 T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN. (C) 2013 AIP Publishing LLC.

引用

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