Growth and crystallinity of ferroelectric BaMgF4 films on (111)-oriented Pt films

被引：5
作者：
Aizawa, K
Moriwaki, M
Ichiki, T
Tokumitsu, E
Ishiwara, H
机构：
[1] Prec. and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama 226
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 2B期
关键词：
ferroelectric; BaMgF4; epitaxial growth; Pt(111)/SiO2/Si(100); MFMIS structure;
D O I：
10.1143/JJAP.36.L234
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Growth of well (Ill)-oriented Pt films on SiO2/Si(100) substrates and the crystallinity of BaMgF4 films grown on the Pt(111)/SiO2/Si(100) substrates have been investigated. It was found by X-ray diffraction analysis that well (111)-oriented Pt films with a best full-width at half maximum (FWHM) of 0.92 degrees were grown by the radio frequency (RF) magnetron sputtering method. It was also found that (120)-oriented BaMgF4 films were grown on Pt(111)/SiO2/Si(100) substrates at temperatures of about 550 degrees C and that the crystallinity of these BaMgF4 films improved as the FWHM of the Pt(lll) diffraction peak decreased. The best FWHM obtained for a BaMgF4 film grown on a Pt(111)/SiO2/Si(100) substrate was 0.97 degrees, and crystallites in the BaMgF4 films grown on Pt(lll)/SiO2/Si(100) substrates were larger (about 0.4 mu m(2)) than those in-the BaMgF4 films grown on Si(111) substrates.
引用
收藏
页码：L234 / L237
页数：4
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