Photoluminescence of polycrystalline CuInSe2 thin films

被引：58

作者：

Zott, S ^{[1
]}

Leo, K ^{[1
]}

Ruckh, M ^{[1
]}

Schock, HW ^{[1
]}

机构：

[1] INST PHYS ELEKTR,D-70569 STUTTGART,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.115704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence of CulnSe(2) thin films grown by multisource physical vapor deposition is investigated over a wide composition range with a specially designed sample. Measurements as a function of excitation intensity, and temperature are correlated with the Cu/In ratio x of the films ranging from 1.47 less than or equal to x less than or equal to 0.46. All the Cu-rich samples (x>1.0) show well-defined peak positions independent of the composition. In the slightly In-rich region (x=0.90) where the best absorber layers for high efficiency CuInSe2 solar cells are expected, two broad emission lines are ascribed to donor-acceptor pair transitions. For very In-rich samples (x<0.67), a blue shift of the dominant transition is observed. (C) 1996 American Institute of Physics.

引用

页码：1144 / 1146

页数：3

共 15 条

[1]

ABOUELFOTOUH F, 1990, SOL CELLS, V30, P151

[2] DEFECT LEVEL IDENTIFICATION IN CUINSE2 FROM PHOTOLUMINESCENCE STUDIES [J].