Drift-diffusion modeling of InP-based triple junction solar cells

被引：10

作者：

Lumb, M. P. ^{[1
]}

Gonzalez, M. ^{[1
]}

Bailey, C. G. ^{[1
]}

Vurgaftman, I. ^{[1
]}

Meyer, J. R. ^{[1
]}

Abell, J. ^{[1
]}

Yakes, M. ^{[1
]}

Hoheisel, R. ^{[1
]}

Tischler, J. G. ^{[1
]}

Stavrinou, P. N.

Fuhrer, M.

Ekins-Daukes, N. J.

Walters, R. J. ^{[1
]}

机构：

[1] US Naval Res Lab, Washington, DC 20375 USA

来源：

PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES II | 2013年 / 8620卷

关键词：

InP; Solar Cell; Multijunction; Modeling;

D O I：

10.1117/12.2005332

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, we use an analytical drift-diffusion model, coupled with detailed carrier transport and minority carrier lifetime estimates, to make realistic predictions of the conversion efficiency of InP-based triple junction cells. We evaluate the possible strategies for overcoming the problematic top cell for the triple junction, and make comparisons of the more realistic charge transport model with incumbent technologies grown on Ge or GaAs substrates.

引用

页数：9

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