2.8 μm emission from type-I quantum wells grown on InAsxP1-x/InP metamorphic graded buffers

被引：22
作者：
Jung, Daehwan [1 ]
Song, Yuncheng [1 ]
Yu, Lan [2 ]
Wasserman, Daniel [2 ]
Lee, Minjoo Larry [1 ]
机构：
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 25期
基金：
美国国家科学基金会;
关键词：
INTERBAND CASCADE LASERS; INP; PARAMETERS;
D O I：
10.1063/1.4773024
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report 2.8 mu m emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAsxP1-x step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 x 10(6) cm(-2). High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 mu m with a narrow linewidth (similar to 50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773024]
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页数：4
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