Development of Near-Field Emission Limit from Radiated-Emission Limit Based on Statistical Approach

被引：0

作者：

See, Kye-Yak ^{[1
]}

Fang, Ning ^{[2
]}

Wang, Lin-Biao

Soh, Weishan ^{[1
]}

Svimonishvili, Tengiz ^{[1
]}

Oswal, Manish ^{[3
]}

Chang, Weng-Yew ^{[4
]}

Koh, Wee-Jin ^{[4
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Beijing Univ Aeronaut & Astronaut, Beijing, Peoples R China

[3] Hewlett Packard Corp, Singapore, Singapore

[4] DSO Natl Labs, Singapore, Singapore

来源：

2012 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM (EDAPS) | 2012年

关键词：

TRANSFORMATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses a novel approach to transforming a radiated-emission limit (e.g., CISPR 22 and FCC) from the far-field to the near-field region. The proposed approach combines data from a near-field scanner and a gigahertz transverse electromagnetic cell with statistics to establish a simple relationship between a near-field magnetic field and a far-field electric field. It is shown that the proposed approach has the potential to be a simple, quick, and fairly inexpensive tool for electromagnetic compatibility pre-compliance purposes.

引用

页码：57 / 60

页数：4

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