The effects of epoxy die bonding on the reliability of pseudomorphic GaAs/InGaAs/AlGaAs HEMTs

被引：2

作者：

Lindsay, CE ^{[1
]}

Conlon, RFB ^{[1
]}

Davies, RA ^{[1
]}

Hall, A ^{[1
]}

机构：

[1] GEC Marconi Caswell, Towcester NN12 8EQ, Northants, England

来源：

1998 GAAS RELIABILITY WORKSHOP, PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/GAASRW.1998.768042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

During elevated temperature bias stress of pseudomorphic GaAs/InGaAs/AlGaAs HEMTs long term changes in Ids, gm and breakdown voltage are observed. DC parametric analysis identifies at least two separate mechanisms responsible for the changes in Ids and gm and a further mechanism responsible for changes in breakdown voltage. Unique activation energies are associated with each mechanism. The rate of degradation of all parameters is significantly different for devices assembled with conductive epoxy rather than solder. This is a consequence of both the heat cycle associated with solder bonding and the presence of gaseous contaminants.

引用

页码：87 / 91

页数：5

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