Determination of band offset in MgO/InP heterostructure by X-ray photoelectron spectroscopy

被引：10

作者：

Liu, Xue ^{[1
]}

Wang, Xiaohua ^{[1
]}

Wang, Dengkui ^{[1
]}

Tang, Jilong ^{[1
]}

Fang, Xuan ^{[1
]}

Fang, Dan ^{[1
]}

Li, Yongfeng ^{[2
,3
,4
]}

Yao, Bin ^{[2
,3
,4
]}

Ma, Xiaohui ^{[1
]}

Wang, Haizhu ^{[1
]}

Wei, Zhipeng ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Lasers, 7089 Wei Xing Rd, Changchun 130022, Peoples R China

[2] Jilin Univ, State Key Lab Superhard Mat, Changchun 130023, Peoples R China

[3] Jilin Univ, Coll Phys, Changchun 130023, Peoples R China

[4] Jilin Univ, Coll Phys, Key Lab Phys & Technol Adv Batteries, Minist Educ, Changchun 130012, Peoples R China

来源：

VACUUM | 2016年 / 134卷

基金：

中国国家自然科学基金;

关键词：

MgO/InP; Thin film; Heterostructure; Band offset; Atomic layer deposition; ALIGNMENT; MGO; PHOTOLUMINESCENCE; HETEROJUNCTION; ENHANCEMENT; TRANSISTORS; VALENCE; SINX;

D O I：

10.1016/j.vacuum.2016.10.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-ray photoelectron spectroscopy was used to measure the valence-band offset (Delta E-V) of MgO/InP heterostructtire. Two sets of core level pairs in the MgO/InP system were used to demonstrate the accuracy of the calculation, the Delta E-V value was the same (533 +/- 0.15 eV) when using the In 3d(3/2), Mg 2p pair and In 3d(5/2), Mg 2p pair, indicating our calculations are accuracy and reasonable. Taking the band gaps of 7.83 eV for MgO and 1.34 eV for InP into consideration, a type-I band alignment of MgO/InP heterostructure was obtained with conduction band offset (CBO) of 1.16 +/- 0.15 eV for two sets of core level pairs, indicating a nested interface band alignment heterostructure was prepared. The accurate determination of the band alignment of MgO/InP has a significant impact on the performance of InP-based devices. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：136 / 140

页数：5

共 28 条

[1] Valance band offset of TiO2/CuGaO2 hetero-structure measured by x-ray photoelectron spectroscopy [J].

Ajimsha, R. S. ;

Das, Amit K. ;

Sahu, Vikas Kumar ;

Joshi, M. P. ;

Kukreja, L. M. ;

Deshpande, Uday P. ;

Shripathi, T. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2015, 140 :446-449

[2] Determination of MgO/GaN heterojunction band offsets by x-ray photoelectron spectroscopy [J].

Chen, JJ ;

Gila, BP ;

Hlad, M ;

Gerger, A ;

Ren, F ;

Abernathy, CR ;

Pearton, SJ .

APPLIED PHYSICS LETTERS, 2006, 88 (04) :1-3

[3]

Chen W., 2012, ECS SOLID STATE LETT, V1, P17

[4] Suppression of Oxygen Vacancy and Enhancement in Bias Stress Stability of High-Mobility ZnO Thin-Film Transistors with N2O Plasma Treated MgO Gate Dielectrics [J].

Chen, Wei-Yu ;

Chen, Jen-Sue ;

Jeng, Jiann-Shing .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (06) :P287-P291

[5] Electron band alignment between (100)InP and atomic-layer deposited Al2O3 [J].

Chou, Hsing-Yi ;

Afanas'ev, V. V. ;

Stesmans, A. ;

Lin, H. C. ;

Hurley, P. K. ;

Newcomb, S. B. .

APPLIED PHYSICS LETTERS, 2010, 97 (13)

[6] Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces [J].

Distefano, Jennifer ;

Lin, Yu-Chuan ;

Robinson, Joshua ;

Glavin, Nicholas R. ;

Voevodin, Andrey A. ;

Brockman, Justin ;

Kuhn, Markus ;

French, Benjamin ;

King, Sean W. .

JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (02) :983-988

[7] Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing [J].

Fan, Haibo ;

Yang, Zhou ;

Ren, Xianpei ;

Yin, Mingli ;

Gao, Fei ;

Liu, Shengzhong .

AIP ADVANCES, 2016, 6 (01)

[8] Effect of MgO on the enhancement of ultraviolet photoluminescence in ZnO [J].

Fu, Zhengping ;

Dong, Weiwei ;

Yang, Beifang ;

Wang, Zhen ;

Yang, Yingling ;

Yan, Hongwei ;

Zhang, Shuyuan ;

Zuo, Jian ;

Ma, Maosheng ;

Liu, Xianming .

SOLID STATE COMMUNICATIONS, 2006, 138 (04) :179-183

[9] Band offsets in Sc2O3/ZnO heterostructures deposited by RF magnetron sputtering [J].

Hays, David C. ;

Gila, Brent P. ;

Pearton, Stephen J. ;

Kim, Byung-Jae ;

Ren, Fan ;

Jang, Tae Sung .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (05)

[10] Valence and conduction band offsets in sputtered HfO2/InGaZnO4 heterostructures [J].

Hays, David C. ;

Gila, B. P. ;

Lambers, E. S. ;

Pearton, S. J. ;

Ren, F. .

VACUUM, 2015, 116 :60-64

← 1 2 3 →