Backscattering and common-base current gain of the Graphene Base Transistor (GBT)

被引：6

作者：

Venica, Stefano ^{[1
]}

Driussi, Francesco ^{[1
]}

Palestri, Pierpaolo ^{[1
]}

Selmi, Luca ^{[1
]}

机构：

[1] Univ Udine, DIEG, I-33100 Udine, Italy

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 147卷

关键词：

Graphene Base Transistor; Monte Carlo method; Backscattering; Base current; Common-base current gain; RF PERFORMANCE; SIMULATION; DC;

D O I：

10.1016/j.mee.2015.04.089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we investigate electron transport and electron scattering in the insulators of the Graphene Base Transistor (GBT) by means of a Monte Carlo transport model. We focus on electron backscattering in the base-collector insulator as the possible root cause of the large experimental base current and small measured common-base current gain (alpha(F)) of GBTs. Different GBT structures have been simulated and the impact of the scattering parameters on the base current is analyzed. Simulated backscattering-limited alpha(F) values are found to be much higher than available experimental data, suggesting that state-of-the-art technology is still far from being optimized. However, those simulated alpha(F) values can be low enough to limit the maximum achievable GBT performance. (C) 2015 Elsevier B.V. All rights reserved.

引用

收藏

页码：192 / 195

页数：4

相关论文

共 16 条

[1] High-frequency self-aligned graphene transistors with transferred gate stacks [J].

Cheng, Rui ;

Bai, Jingwei ;

Liao, Lei ;

Zhou, Hailong ;

Chen, Yu ;

Liu, Lixin ;

Lin, Yung-Chen ;

Jiang, Shan ;

Huang, Yu ;

Duan, Xiangfeng .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2012, 109 (29) :11588-11592

[2] Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation [J].

Di Lecce, Valerio ;

Grassi, Roberto ;

Gnudi, Antonio ;

Gnani, Elena ;

Reggiani, Susanna ;

Baccarani, Giorgio .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) :3584-3591

[3] Mobility and saturation velocity in graphene on SiO2 [J].

Dorgan, Vincent E. ;

Bae, Myung-Ho ;

Pop, Eric .

APPLIED PHYSICS LETTERS, 2010, 97 (08)

[4] Modeling, simulation and design of the vertical Graphene Base Transistor [J].

Driussi, F. ;

Palestri, P. ;

Selmi, L. .

MICROELECTRONIC ENGINEERING, 2013, 109 :338-341

[5] Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator:: The role of remote phonon scattering [J].

Fischetti, MV ;

Neumayer, DA ;

Cartier, EA .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (09) :4587-4608

[6] THEORY OF HIGH-FIELD ELECTRON-TRANSPORT IN SILICON DIOXIDE [J].

FISCHETTI, MV ;

DIMARIA, DJ ;

BRORSON, SD ;

THEIS, TN ;

KIRTLEY, JR .

PHYSICAL REVIEW B, 1985, 31 (12) :8124-8142

[7] BALLISTIC HOT-ELECTRON TRANSISTORS [J].

HEIBLUM, M ;

FISCHETTI, MV .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1990, 34 (04) :530-549

[8]

Kravets VG, 2005, PHYS REV B, V72, DOI [10.1103/PhysRevB.72.064303, 10.1103/PhysrevB.72.064303]

[9] Vertical Graphene Base Transistor [J].

Mehr, Wolfgang ;

Dabrowski, Jarek ;

Scheytt, J. Christoph ;

Lippert, Gunther ;

Xie, Ya-Hong ;

Lemme, Max C. ;

Ostling, Mikael ;

Lupina, Grzegorz .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (05) :691-693

[10] Coupled Monte Carlo simulation of Si and SiO2 transport in MOS capacitors [J].

Palestri, P ;

Selmi, L ;

Pavesi, M ;

Widdershoven, F ;

Sangiorgi, E .

2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2000, :38-41