Demonstration of 13.56-MHz class-E amplifier using a high-voltage GaN power-HEMT

被引：45

作者：

Saito, Wataru ^{[1
]}

Domon, Tomokazu

Omura, Ichiro

Kuraguchi, Masahiko

Takada, Yoshiharu

Tsuda, Kunio

Yamaguchi, Masakazu

机构：

[1] Toshiba Co Ltd, Semicond Co, Kawasaki, Kanagawa 2128583, Japan

[2] Toshiba Business & Life Serv Corp, Kawasaki, Kanagawa 2128583, Japan

[3] Toshiba Co Ltd, R&D Ctr, Kawasaki, Kanagawa 2128583, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 05期

关键词：

gallium nitride (GaN); HEMT; high frequency; high voltage;

D O I：

10.1109/LED.2006.873756

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 13.56-MHz class-E amplifier with a high-voltage GaN HEMT as the main switching device is demonstrated to show the possibility of using GaN HEMTs in high-frequency switching power applications such as RF power-supply applications. The 380-V/1.9-A GaN power HEMT was designed and fabricated for high-voltage power-electronics applications. The demonstrated circuit achieved the output power of 13.4 W and the power efficiency of 91% under a drain-peak voltage as high as 330 V. This result shows that high-voltage GaN devices are suitable for high-frequency switching applications under high dc input voltage of over 100 V.

引用

页码：326 / 328

页数：3

共 13 条

[1] AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure [J].

Hikita, M ;

Yanagihara, M ;

Nakazawa, K ;

Ueno, H ;

Hirose, Y ;

Ueda, T ;

Uemoto, Y ;

Tanaka, T ;

Ueda, D ;

Egawa, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (09) :1963-1968

[2] AlGaN/GaN heterostructure field-effect transistors (HFETs) on Si substrates for large-current operation [J].

Iwakami, S ;

Yanagihara, M ;

Machida, O ;

Chino, E ;

Kaneko, N ;

Goto, H ;

Ohtsuka, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (7A) :L831-L833

[3] High-voltage power MOSFETs reached almost to the silicon limit [J].

Kobayashi, T ;

Abe, H ;

Niimura, Y ;

Yamada, T ;

Kurosaki, A ;

Hosen, T ;

Fujihira, T .

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, :435-438

[4] High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current [J].

Kuraguchi, M ;

Takada, Y ;

Saito, W ;

Omura, I ;

Tsuda, K .

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07) :2647-2650

[5] AlGaN/GaN HEMTs - An overview of device operation and applications [J].

Mishra, UK ;

Parikh, P ;

Wu, YF .

PROCEEDINGS OF THE IEEE, 2002, 90 (06) :1022-1031

[6] ALGaN/GaN moshfet integrated circuit power converter [J].

Pytel, SG ;

Lentijo, S ;

Koudymov, A ;

Rai, S ;

Fatima, H ;

Adivarahan, V ;

Chitnis, A ;

Yang, J ;

Hudgins, JL ;

Santi, E ;

Monti, A ;

Simin, G ;

Khan, MA .

PESC 04: 2004 IEEE 35TH ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-6, CONFERENCE PROCEEDINGS, 2004, :579-584

[7]

Saito W, 2005, INT EL DEVICES MEET, P597

[8] High breakdown voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application [J].

Saito, W ;

Kuraguchi, M ;

Takada, Y ;

Tsuda, K ;

Omura, I ;

Ogura, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (11) :1913-1917

[9] High breakdown voltage AlGaN-GaN Power-HEMT design and high current density switching behavior [J].

Saito, W ;

Takada, Y ;

Kuraguchi, M ;

Tsuda, K ;

Omura, I ;

Ogura, T ;

Ohashi, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) :2528-2531

[10] 7.5kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates [J].

Simin, G ;

Hu, X ;

Ilinskaya, N ;

Kumar, A ;

Koudymov, A ;

Zhang, J ;

Khan, MA ;

Gaska, R ;

Shur, MS .

ELECTRONICS LETTERS, 2000, 36 (24) :2043-2044

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