Study of CoSi2 formation from a Co-Ni alloy

被引：14
作者：
Chamirian, O
Steegen, A
Bender, H
Lauwers, A
de Potter, M
Marabelli, F
Maex, K
机构：
[1] IMEC, B-3001 Louvain, Belgium
[2] Univ Pavia, INFM, I-27100 Pavia, Italy
[3] Katholieke Univ Leuven, EE Dept, Louvain, Belgium
来源：
MICROELECTRONIC ENGINEERING | 2002年 / 60卷 / 1-2期
关键词：
Co-Ni silicide; nucleation temperature; sheet resistance; roughness; stress;
D O I：
10.1016/S0167-9317(01)00598-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
CoSi2 formation from Co-Ni alloys with 25 and 10% Ni content was investigated. Samples with various Co-Ni/Ti stacks were characterized by four-point probe, AES, XRD, RBS and TEM. Light scattering measurements were carried out for roughness evaluation, Stress build-up was estimated from room temperature measurements of wafer curvature. It was found that Co disilicide formation temperature decreases with an increase of the Ni percentage. CoSi2, growth at temperatures around 450-500degreesC depending on Ni concentration and Ti cap thickness was observed. Sheet resistance of 5-6.5 Omega/sq. was measured for various Co-Ni/Ti compositions. CoSi2(220) and CoSi2(111) peaks were detected on XRD spectra for both Ni-rich and Ni-poor layer. Stress values of 0.9-1.9 GPa were calculated for silicidation of various Co-Ni/Ti stacks. The roughness of the silicide film was found to be dependent on Ni concentration, Ti cap thickness and anneal temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：221 / 230
页数：10
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