Effect of Ion Beam Energy on Density, Roughness & Uniformity of Co Film Deposited using Ion Beam Sputtering System

被引:2
|
作者
Dhawan, Rajnish [1 ]
Rai, Sanjay [1 ]
Lodha, G. S. [1 ]
机构
[1] Raja Ramanna Ctr Adv Technol, Ind Synchrotron Utilizat Div, Xray Opt Sect, Indore 452013, Madhya Pradesh, India
来源
关键词
Ion beam; sputtering; surface roughness; x-ray reflectivity;
D O I
10.1063/1.4710191
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cobalt (Co) films were prepared, using ion beam sputtering technique. Films were prepared by varying beam voltage from 700 to 1100 V at room temperature. The influence of ion beam energy on the density, surface roughness and thickness uniformity of Co film was investigated. X-ray reflectivity study shows that surface roughness of film decreases with increasing beam energy and lowest surface roughness of 1.3 angstrom was achieved for 1000 V beam voltage at 4 cm(3)/min Ar gas flow. The density of the film was 93 % of bulk density of Co. These ultra low roughness films are very promising for studying the magnetic properties of Co films.
引用
收藏
页码:691 / 692
页数:2
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