A 450 °C High Voltage Gain AC Coupled Differential Amplifier

被引：0

作者：

Yang, Jie ^{[1
]}

Fraley, John ^{[1
]}

Western, Bryon ^{[1
]}

Schupbach, Marcelo ^{[1
]}

Lostetter, Alexander ^{[1
]}

机构：

[1] APEI Inc, Fayetteville, AR 72703 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

Silicon Carbide; Differential Amplifier; High Temperature;

D O I：

10.4028/www.scientific.net/MSF.717-720.1253

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of high temperature operation up to 450 degrees C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with harsh environment sensors that deliver weak AC output signals to improve signal quality and noise immunity.

引用

页码：1253 / 1256

页数：4

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