Crystalline GeTe-based phase-change alloys: Disorder in order

被引：34

作者：

Krbal, Milos ^{[1
]}

Kolobov, Alexander V. ^{[1
]}

Fons, Paul ^{[1
]}

Tominaga, Junji ^{[1
]}

Elliott, S. R. ^{[2
]}

Hegedus, J. ^{[3
]}

Giussani, A. ^{[4
]}

Perumal, K. ^{[4
]}

Calarco, R. ^{[4
]}

Matsunaga, T. ^{[5
]}

Yamada, N. ^{[6
]}

Nitta, K. ^{[7
]}

Uruga, T. ^{[7
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanodevice Innovat Res Ctr, Tsukuba, Ibaraki 3058562, Japan

[2] Univ Cambridge, Dept Chem, Cambridge CB2 1EW, England

[3] Aalto Univ, Sch Sci, COMP Dept Appl Phys, FI-00076 Aalto, Finland

[4] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[5] Panasonic Corp, Mat & Proc Dev Ctr, Moriguchi, Osaka 5708501, Japan

[6] Panasonic Corp, Adv Technol Res Labs, Kyoto 6190237, Japan

[7] Japan Synchrotron Radiat Res Inst, Sayo, Hyogo 6795198, Japan

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 04期

关键词：

TRANSITION; GE2SB2TE5; ENERGY; MEMORY; FILMS;

D O I：

10.1103/PhysRevB.86.045212

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Through the combined use of x-ray absorption and scattering experiments and ab initio simulations, we demonstrate that the metastable cubic phase of GeTe-based phase-change alloys, e. g. Ge2Sb2Te5, is significantly more disordered than is generally believed, with a large number of Ge atoms located off octahedral resonantly bonded sites. The stochastic off-octahedral locations of Ge atoms, that are invisible to Bragg diffraction probing the average structure, lead to disruption of the continuous resonance bonding network of the crystalline phase, resulting in localization of charge carriers. It is proposed that the degree of coherency of local rhombohedral displacements, that may be varied, e. g., by doping, can serve as means to control electrical properties of Ge-Sb-Te alloys.

引用

页数：6

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