Chemical Sensing of 2D Graphene/MoS2 Heterostructure device

被引:407
作者
Cho, Byungjin [1 ]
Yoon, Jongwon [2 ]
Lim, Sung Kwan [2 ]
Kim, Ah Ra [1 ]
Kim, Dong-Ho [1 ]
Park, Sung-Gyu [1 ]
Kwon, Jung-Dae [1 ]
Lee, Young-Joo [1 ]
Lee, Kyu-Hwan [3 ]
Lee, Byoung Hun [2 ]
Ko, Heung Cho [2 ]
Hahm, Myung Gwan [1 ]
机构
[1] Korea Inst Mat Sci, Dept Adv Funct Thin Films, Surface Technol Div, Chang Won 642831, Gyeongnam, South Korea
[2] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Gwangju 500712, South Korea
[3] Korea Inst Mat Sci, Electrochem Dept, Surface Technol Div, Chang Won 642831, Gyeongnam, South Korea
基金
新加坡国家研究基金会;
关键词
MoS2; graphene; gas sensor; heterostructure; flexible device; LAYER MOS2; SINGLE-LAYER; RAMAN-SCATTERING; CHARGE-TRANSFER; GAS MOLECULES; LARGE-AREA; MONOLAYER; IDENTIFICATION; ELECTRONICS; TRANSISTORS;
D O I
10.1021/acsami.5b04541
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report the production of a two-dimensional (2D) heterostructured gas sensor. The gas-sensing characteristics of exfoliated molybdenum disulfide (MoS2) connected to interdigitated metal electrodes were investigated. The MoS2 flake-based sensor detected a NO2 concentration as low as 1.2 ppm and exhibited excellent gas-sensing stability. Instead of metal electrodes, patterned graphene was used for charge collection in the MoS2-based sensing devices. An equation based on variable resistance terms was used to describe the sensing mechanism of the graphene/MoS2 device. Furthermore, the gas response characteristics of the heterostructured device on a flexible substrate were retained without serious performance degradation, even under mechanical deformation. This novel sensing structure based on a 2D heterostructure promises to provide a simple route to an essential sensing platform for wearable electronics.
引用
收藏
页码:16775 / 16780
页数:6
相关论文
共 47 条
[1]   SURFACE-PHONON DISPERSION OF MOS2 [J].
BERTRAND, PA .
PHYSICAL REVIEW B, 1991, 44 (11) :5745-5749
[2]   Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].
Britnell, L. ;
Gorbachev, R. V. ;
Jalil, R. ;
Belle, B. D. ;
Schedin, F. ;
Mishchenko, A. ;
Georgiou, T. ;
Katsnelson, M. I. ;
Eaves, L. ;
Morozov, S. V. ;
Peres, N. M. R. ;
Leist, J. ;
Geim, A. K. ;
Novoselov, K. S. ;
Ponomarenko, L. A. .
SCIENCE, 2012, 335 (6071) :947-950
[3]   Geometrical approach for the study of G′ band in the Raman spectrum of monolayer graphene, bilayer graphene, and bulk graphite [J].
Cancado, L. G. ;
Reina, A. ;
Kong, J. ;
Dresselhaus, M. S. .
PHYSICAL REVIEW B, 2008, 77 (24)
[4]   Bifunctional Sensing Characteristics of Chemical Vapor Deposition Synthesized Atomic-Layered MoS2 [J].
Cho, Byungjin ;
Kim, Ah Ra ;
Park, Youngjin ;
Yoon, Jongwon ;
Lee, Young-Joo ;
Lee, Sangchul ;
Yoo, Tae Jin ;
Kang, Chang Goo ;
Lee, Byoung Hun ;
Ko, Heung Cho ;
Kim, Dong-Ho ;
Hahm, Myung Gwan .
ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (04) :2952-2959
[5]   Charge-transfer-based Gas Sensing Using Atomic-layer MoS2 [J].
Cho, Byungjin ;
Hahm, Myung Gwan ;
Choi, Minseok ;
Yoon, Jongwon ;
Kim, Ah Ra ;
Lee, Young-Joo ;
Park, Sung-Gyu ;
Kwon, Jung-Dae ;
Kim, Chang Su ;
Song, Myungkwan ;
Jeong, Yongsoo ;
Nam, Kee-Seok ;
Lee, Sangchul ;
Yoo, Tae Jin ;
Kang, Chang Goo ;
Lee, Byoung Hun ;
Ko, Heung Cho ;
Ajayan, Pulickel M. ;
Kim, Dong-Ho .
SCIENTIFIC REPORTS, 2015, 5 :8052
[6]   Graphene-based gas sensor: metal decoration effect and application to a flexible device [J].
Cho, Byungjin ;
Yoon, Jongwon ;
Hahm, Myung Gwan ;
Kim, Dong-Ho ;
Kim, Ah Ra ;
Kahng, Yung Ho ;
Park, Sang-Won ;
Lee, Young-Joo ;
Park, Sung-Gyu ;
Kwon, Jung-Dae ;
Kim, Chang Su ;
Song, Myungkwan ;
Jeong, Yongsoo ;
Nam, Kee-Seok ;
Ko, Heung Cho .
JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (27) :5280-5285
[7]   Flexible and Transparent Gas Molecule Sensor Integrated with Sensing and Heating Graphene Layers [J].
Choi, Hongkyw ;
Choi, Jin Sik ;
Kim, Jin-Soo ;
Choe, Jong-Ho ;
Chung, Kwang Hyo ;
Shin, Jin-Wook ;
Kim, Jin Tae ;
Youn, Doo-Hyeb ;
Kim, Ki-Chul ;
Lee, Jeong-Ik ;
Choi, Sung-Yool ;
Kim, Philip ;
Choi, Choon-Gi ;
Yu, Young-Jun .
SMALL, 2014, 10 (18) :3685-3691
[8]   Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate [J].
Dolui, Kapildeb ;
Rungger, Ivan ;
Sanvito, Stefano .
PHYSICAL REVIEW B, 2013, 87 (16)
[9]   HETEROJUNCTIONS IN 2D SEMICONDUCTORS A perfect match [J].
Duesberg, Georg S. .
NATURE MATERIALS, 2014, 13 (12) :1075-1076
[10]  
Fiori G, 2014, NAT NANOTECHNOL, V9, P768, DOI [10.1038/nnano.2014.207, 10.1038/NNANO.2014.207]