Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

被引：31

作者：

Zhao, X. Q. ^{[1
]}

Kim, C. R. ^{[1
]}

Lee, J. Y. ^{[1
]}

Heo, J. H. ^{[1
]}

Shin, C. M. ^{[1
]}

Ryu, H. ^{[1
]}

Chang, J. H.

Lee, H. C. ^{[2
]}

Son, C. S. ^{[3
]}

Lee, W. J. ^{[4
]}

Jung, W. G. ^{[5
]}

Tan, S. T. ^{[6
]}

Zhao, J. L. ^{[7
]}

Sun, X. W. ^{[6
,7
]}

机构：

[1] Inje Univ, Ctr Nano Mfg, Dept Nano Syst Engn, Gimhae 621749, Gyeongnam, South Korea

[2] Korea Maritime Univ, Dept Mechatron Engn, Pusan 606791, South Korea

[3] Silla Univ, Dept Elect Mat Engn, Pusan 617736, South Korea

[4] Dong Eui Univ, Dept Nano Engn, Pusan 614714, South Korea

[5] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea

[6] Inst Microelect, Singapore 117685, Singapore

[7] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 08期

关键词：

ZnO; Hydrothermal synthesis; Buffer layer annealing; THIN-FILMS; SUBSTRATE-TEMPERATURE; PREPARING CONDITIONS; PATTERNED GROWTH; NANOWIRE ARRAYS; NANOROD ARRAYS; SEED LAYER; DEPOSITION; DEPENDENCE; THICKNESS;

D O I：

10.1016/j.apsusc.2008.11.051

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 degrees C with the concentration of 0.3 M exhibits the best structural and optical properties. (C) 2008 Elsevier B. V. All rights reserved.

引用

页码：4461 / 4465

页数：5

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