One-dimensional ZnO nanostructure growth prepared by thermal evaporation on different substrates: Ultraviolet emission as a function of size and dimensionality

被引:31
作者
Hassan, N. K. [1 ,2 ]
Hashim, M. R. [1 ]
Bououdina, M. [3 ]
机构
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res Lab, George Town 11800, Malaysia
[2] Tikrit Univ, Coll Educ, Dept Phys, Tikrit, Iraq
[3] Univ Bahrain, Nanotechnol Ctr, Isa Town, Bahrain
关键词
One-dimensional ZnO; Catalyst free; Large scale; UV emission enhancement; ZINC-OXIDE; CATALYTIC GROWTH; THIN-FILMS; NANOWIRES; NANORODS; SILICON; PHOTOLUMINESCENCE; PHOTODIODES; FABRICATION; MECHANISM;
D O I
10.1016/j.ceramint.2013.02.088
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Large-scale uniform one-dimensional ZnO nanostructures were fabricated through thermal evaporation via the vapor solid mechanism on different substrates. The effects of Si (100), Si (111), SiO2 and sapphire substrates with constant oxygen treatment on the morphology and diameter of ZnO nanostructures were investigated. It is found that the type of substrate has a great effect on the shape and diameter of the synthesized nanowires, nanorods, and nanotubes. It is noticed that the size and dimensionality were the most influential parameters on both structural and optical properties of the grown ZnO nanostructures. X-ray diffraction analysis confirms the stability of the wurtzite crystal structure for all grown ZnO nanostructures and the preferred orientation is substrate dependent. The crystallinity as well as the defects within the crystal lattice of the grown ZnO nanostructures was studied through Raman spectroscopy. The photoluminescence spectra of ZnO nanostructures grown on Si (100), Si (111), SiO2 and sapphire substrates showed two peaks at a near-band-edge (NBE) emission in the ultraviolet region and a broad deep-level emission (DLE) around the green emission. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:7439 / 7444
页数:6
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