Intriguing electronic structures and optical properties of two-dimensional van der Waals heterostructures of Zr2CT2 (T = O, F) with MoSe2 and WSe2

被引:82
作者
Rehman, Gul [1 ,2 ]
Khan, S. A. [3 ]
Amin, B. [3 ]
Ahmad, Iftikhar [1 ,4 ]
Gan, Li-Yong [5 ]
Maqbool, Muhammad [6 ]
机构
[1] Univ Malakand, Ctr Computat Mat Sci, Chakdara 18800, Pakistan
[2] Univ Malakand, Dept Phys, Chakdara 18800, Pakistan
[3] Hazara Univ, Dept Phys, Mansehra 21300, Pakistan
[4] Abbottabad Univ Sci & Technol, Havelian, Pakistan
[5] South China Univ Technol, Sch Mat Sci & Engn, Key Lab Adv Energy Storage Mat Guangdong Prov, Guangzhou 510641, Guangdong, Peoples R China
[6] Univ Alabama Birmingham, Dept Clin & Diagnost Sci, Birmingham, AL 35294 USA
基金
中国国家自然科学基金;
关键词
TRANSITION-METAL DICHALCOGENIDES; MXENES; GRAPHENE; NANOSHEETS; PHOTOLUMINESCENCE; EXFOLIATION; MONOLAYER; CARBIDES; WS2;
D O I
10.1039/c7tc05963a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Based on (hybrid) first-principles calculations, material properties (structural, electronic, vibrational, optical, and photocatalytic) of van der Waals heterostructures and their corresponding monolayers (transition metal dichalcogenides and MXenes) are investigated. MoSe2/Zr2CO2 and WSe2/Zr2CO2 heterostructures are found to be indirect band gap semiconductors with type-I and type-II band alignment, respectively, while MoSe2/Zr2CF2 and WSe2/Zr2CF2 are metals. A transition from type-I to type-II band alignment is achieved in MoSe2/Zr2CF2 by moderate compressive and tensile strain. Furthermore, absorption spectra are calculated to understand the optical behavior of these systems, whereas red and blue shifts are observed in the positions of the excitonic peaks under tensile and compressive strain in the heterostructures. Photocatalytic studies show that MoSe2/Zr2CO2 and WSe2/Zr2CO2 heterostructures can oxidize H2O/O-2 to O-2, but unlike their parent monolayers (MoSe2, WSe2 and Zr2CO2) these heterostructures fail to reduce H+ to H-2.
引用
收藏
页码:2830 / 2839
页数:10
相关论文
共 72 条
[1]   Two-dimensional flexible nanoelectronics [J].
Akinwande, Deji ;
Petrone, Nicholas ;
Hone, James .
NATURE COMMUNICATIONS, 2014, 5
[2]   Heterostructures of transition metal dichalcogenides [J].
Amin, B. ;
Singh, N. ;
Schwingenschloegl, U. .
PHYSICAL REVIEW B, 2015, 92 (07)
[3]   Strain engineering of WS2, WSe2, and WTe2 [J].
Amin, B. ;
Kaloni, T. P. ;
Schwingenschloegl, U. .
RSC ADVANCES, 2014, 4 (65) :34561-34565
[4]   Materials properties of out-of-plane heterostructures of MoS2-WSe2 and WS2-MoSe2 [J].
Amin, Bin ;
Kaloni, Thaneshwor P. ;
Schreckenbach, Georg ;
Freund, Michael S. .
APPLIED PHYSICS LETTERS, 2016, 108 (06)
[5]   Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].
Britnell, L. ;
Gorbachev, R. V. ;
Jalil, R. ;
Belle, B. D. ;
Schedin, F. ;
Mishchenko, A. ;
Georgiou, T. ;
Katsnelson, M. I. ;
Eaves, L. ;
Morozov, S. V. ;
Peres, N. M. R. ;
Leist, J. ;
Geim, A. K. ;
Novoselov, K. S. ;
Ponomarenko, L. A. .
SCIENCE, 2012, 335 (6071) :947-950
[6]   Ultrafast Charge Separation and Indirect Exciton Formation in a MoS2-MoSe2 van der Waals Heterostructure [J].
Ceballos, Frank ;
Bellus, Matthew Z. ;
Chiu, Hsin-Ying ;
Zhao, Hui .
ACS NANO, 2014, 8 (12) :12717-12724
[7]   Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p-n Diodes [J].
Cheng, Rui ;
Li, Dehui ;
Zhou, Hailong ;
Wang, Chen ;
Yin, Anxiang ;
Jiang, Shan ;
Liu, Yuan ;
Chen, Yu ;
Huang, Yu ;
Duan, Xiangfeng .
NANO LETTERS, 2014, 14 (10) :5590-5597
[8]   Spectroscopic Signatures for Interlayer Coupling in MoS2-WSe2 van der Waals Stacking [J].
Chiu, Ming-Hui ;
Li, Ming-Yang ;
Zhang, Wengjing ;
Hsu, Wei-Ting ;
Chang, Wen-Hao ;
Terrones, Mauricio ;
Terrones, Humberto ;
Li, Lain-Jong .
ACS NANO, 2014, 8 (09) :9649-9656
[9]   Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials [J].
Coleman, Jonathan N. ;
Lotya, Mustafa ;
O'Neill, Arlene ;
Bergin, Shane D. ;
King, Paul J. ;
Khan, Umar ;
Young, Karen ;
Gaucher, Alexandre ;
De, Sukanta ;
Smith, Ronan J. ;
Shvets, Igor V. ;
Arora, Sunil K. ;
Stanton, George ;
Kim, Hye-Young ;
Lee, Kangho ;
Kim, Gyu Tae ;
Duesberg, Georg S. ;
Hallam, Toby ;
Boland, John J. ;
Wang, Jing Jing ;
Donegan, John F. ;
Grunlan, Jaime C. ;
Moriarty, Gregory ;
Shmeliov, Aleksey ;
Nicholls, Rebecca J. ;
Perkins, James M. ;
Grieveson, Eleanor M. ;
Theuwissen, Koenraad ;
McComb, David W. ;
Nellist, Peter D. ;
Nicolosi, Valeria .
SCIENCE, 2011, 331 (6017) :568-571
[10]  
Fiori G, 2014, NAT NANOTECHNOL, V9, P768, DOI [10.1038/nnano.2014.207, 10.1038/NNANO.2014.207]