Growth of boron nitride on (0001) AlN templates by High Temperature- Hydride Vapor Phase Epitaxy (HT-HVPE)

被引：11

作者：

Coudurier, Nicolas ^{[1
]}

Boichot, Raphael ^{[1
]}

Mercier, Frederic ^{[1
]}

Reboud, Roman ^{[1
]}

Lay, Sabine ^{[1
]}

Blanquet, Elisabeth ^{[1
]}

Pons, Michel ^{[1
]}

机构：

[1] Grenoble INP CNRS UJF, F-38402 St Martin Dheres, France

来源：

NINETEENTH EUROPEAN CONFERENCE ON CHEMICAL VAPOR DEPOSITION (EUROCVD 19) | 2013年 / 46卷

关键词：

Boron nitride; Boron trichloride; HT-HVPE; nanowire; FILMS; DEPOSITION; SUBSTRATE; SAPPHIRE; MOVPE;

D O I：

10.1016/j.phpro.2013.07.050

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

One mu m-thick (0001) t-BN layers have been grown on w-AlN template by HT-HVPE (High Temperature Hydride Vapor Phase Epitaxy). The experimental set-up consists of a vertical cold-wall quartz reactor working at low pressure with an inductively heated graphite susceptor. The used reactants are ammonia (NH3) and boron trichloride (BCl3). As-grown BN layers have been characterized by XRD and TEM. The influence of the temperature and the N/B ratio of precursors in the gas phase, on the c-lattice parameter of BN layer, have been investigated in order to optimize the crystalline quality. For a deposition at a temperature of 1600 degrees C and a N/B ratio of 7.5, the growth of a 2 mu m-thick t-BN layer with lattice parameters (a and c) of 2.50 and 6.78 angstrom has been achieved. (C) 2013 The Authors. Published by Elsevier B.V.

引用

页码：102 / 106

页数：5

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