Characterization and Investigation of a Hot-Carrier Effect in Via-Contact Type a-InGaZnO Thin-Film Transistors

被引：7

作者：

Hsieh, Tien-Yu ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Chen, Yu-Te ^{[3
]}

Liao, Po-Yung ^{[1
]}

Chen, Te-Chih ^{[1
]}

Tsai, Ming-Yen ^{[3
]}

Chen, Yu-Chun ^{[1
]}

Chen, Bo-Wei ^{[3
]}

Chu, Ann-Kuo ^{[3
]}

Chou, Cheng-Hsu ^{[4
]}

Chung, Wang-Cheng ^{[4
]}

Chang, Jung-Fang ^{[4
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan

[4] Chimei Innolux Corp, Prod Technol Ctr, Tainan 350, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 05期

关键词：

Dual gate; hot-carrier; indium gallium zinc oxide (IGZO); thin-film transistors (TFTs); via-contact;

D O I：

10.1109/TED.2013.2253611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical characteristics and the effect of hot-carriers are investigated in via-contact-type a-InGaZnO thin-film transistors. Current-voltage as well as capacitance-voltage measurements are utilized to investigate the impact of top gate bias on device characteristics as well as degradation behaviors caused by a hot-carrier stress. It is found that the redundant source/drain electrodes in via-contact type devices can screen the electric field established by a top gate bias and have significant influence on the device characteristics. Hot-carrier stress brings about electron trapping in the etch stop layer below the redundant electrodes, and this is further verified through modulating the energy band structure by applying a top gate bias during the capacitance-voltage measurement.

引用

页码：1681 / 1688

页数：8

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