Metamorphic DBR and tunnel-junction injection:: A CW RT monolithic long-wavelength VCSEL

被引：91

作者：

Boucart, J ^{[1
]}

Starck, C ^{[1
]}

Gaborit, F ^{[1
]}

Plais, A ^{[1
]}

Bouché, N ^{[1
]}

Derouin, E ^{[1
]}

Remy, JC ^{[1
]}

Bonnet-Gamard, J ^{[1
]}

Goldstein, L ^{[1
]}

Fortin, C ^{[1
]}

Carpentier, D ^{[1
]}

Salet, P ^{[1
]}

Brillouet, F ^{[1
]}

Jacquet, J ^{[1
]}

机构：

[1] Alcatel Corp Res Ctr, Groupement Interet Econ, OPTOplus, F-91460 Marcoussis, France

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1999年 / 5卷 / 03期

关键词：

GaAs; InP; metamorphic; surface emitting laser; tunnel diode;

D O I：

10.1109/2944.788414

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present and give details about the conception and realization of the first monolithic long wavelength vertical-cavity surface-emitting laser (VCSEL) operating continuous wave at room temperature. This approach relies on two originalities: a metamorphic GaAs-AlAs distributed Bragg reflector and an injection through a reverse-biased tunnel junction. Record output powers as high as 1 mW and a maximum operating temperature of 47 degrees C have thus been achieved. Furthermore, in this paper, we present the optimization work on the different constituting parts of the VCSEL.

引用

页码：520 / 529

页数：10

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