Modelling the threshold voltage of p-channel enhancement-mode GaN heterostructure field-effect transistors

被引：12

作者：

Kumar, Ashwani ^{[1
]}

De Souza, Maria Merlyne ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, George Porter Bldg,Broad Lane, Sheffield, S Yorkshire, England

来源：

IET POWER ELECTRONICS | 2018年 / 11卷 / 04期

关键词：

gallium compounds; III-V semiconductors; wide band gap semiconductors; aluminium compounds; MOSFET; two-dimensional hole gas; technology CAD (electronics); threshold voltage modelling; p-channel enhancement-mode heterostructure field-effect transistor; p-channel metal-oxide-semiconductor heterostructure field-effect transistor; polarisation induced two-dimensional hole gas; depletion mode; TCAD simulation; AlGaN-GaN-AlGaN-GaN; ELECTRON-TRANSPORT;

D O I：

10.1049/iet-pel.2017.0438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

p-Channel gallium nitride (GaN) metal-oxide-semiconductor heterostructure field-effect transistors utilising a polarisation induced two-dimensional hole gas operate inherently in depletion mode. The condition for their conversion to enhancement-mode operation is examined via analytical expressions for the threshold voltage and verified via technology computer-aided design (TCAD) simulations. Between the two heterostructures: (i) conventional GaN/aluminium GaN (AlGaN)/GaN and (ii) alternate AlGaN/GaN/AlGaN/GaN examined in this work, the authors demonstrate at higher threshold voltage (> vertical bar-2 vertical bar V), the alternate heterostructure can potentially achieve a higher on-current by a factor of 2 of (similar to 30 mA/mm), without degradation in the on-off-current ratio, expected ideally to be of the order of similar to 12.

引用

收藏

页码：675 / 680

页数：6

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