Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

被引：26

作者：

Abe, Y. ^{[1
]}

Umeda, T. ^{[1
]}

Okamoto, M. ^{[2
]}

Kosugi, R. ^{[2
]}

Harada, S. ^{[2
]}

Haruyama, M. ^{[3
]}

Kada, W. ^{[3
]}

Hanaizumi, O. ^{[3
]}

Onoda, S. ^{[4
]}

Ohshima, T. ^{[4
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[3] Gunma Univ, Sch Sci & Technol, Kiryu, Gunma 3760052, Japan

[4] Natl Inst Quantum & Radiol Sci & Technol QST, Takasaki, Gunma 3701292, Japan

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 03期

关键词：

SILICON-CARBIDE; INTENSITY; SPINS;

D O I：

10.1063/1.4994241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET. Published by AIP Publishing.

引用

页数：5

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