Crystalline and electronic structure of epitaxial γ-Al2O3 films

被引：2

作者：

Wu, Huiyan ^{[1
]}

Lu, Dawei ^{[2
]}

Zhu, Kerong ^{[1
]}

Xu, Guoyong ^{[1
]}

Wang, Hu ^{[1
]}

机构：

[1] Anhui Univ, Modern Expt Technol Ctr, Hefei 230039, Peoples R China

[2] Zaozhuang Vocat Coll Sci & Technol, Tengzhou 277500, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2013年 / 413卷

关键词：

Epitaxial film; Electronic properties; X-ray absorption spectroscopy; Density functional theory; COMPUTATION; DEPOSITION; CLUSTERS; GROWTH;

D O I：

10.1016/j.physb.2013.01.002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Epitaxial gamma-Al2O3 films were fabricated on SrTiO3 (1 0 0) substrates using pulsed laser deposition (PLD) technique. The high quality of epitaxial growth gamma-Al2O3 films was confirmed by X-ray diffraction (XRD). Atomic force microscopy (AFM) images indicated the smooth surfaces and the step-flow growth of the films. In order to illuminate the electronic properties and the local structure of the epitaxial gamma-Al2O3, we experimentally measured the X-ray absorption near-edge structure (XANES) spectrum at the O K-edge and compared the spectrum with the theoretical simulations by using various structure models. Our results based on XANES spectrum analysis indicated that the structure of the epitaxial gamma-Al2O3 film was a defective spinel with Al vacancies, which prefer to be located at the octahedral sites. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：105 / 108

页数：4

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