Band offset in (Ga, In)As/Ga(As, Sb) heterostructures

被引：5
|
作者：
Gies, S. [1 ,2 ]
Weseloh, M. J. [1 ,2 ]
Fuchs, C. [1 ,2 ]
Stolz, W. [1 ,2 ]
Hader, J. [3 ,4 ]
Moloney, J. V. [3 ,4 ]
Koch, S. W. [1 ,2 ]
Heimbrodt, W. [1 ,2 ]
机构：
[1] Philipps Univ Marburg, Dept Phys, Renthof 5, D-35032 Marburg, Germany
[2] Philipps Univ Marburg, Ctr Mat Sci, Renthof 5, D-35032 Marburg, Germany
[3] Nonlinear Control Strategies Inc, 7040 N Montecatina Dr, Tucson, AZ 85704 USA
[4] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2016年 / 120卷 / 20期
关键词：
SPONTANEOUS EMISSION; GROWTH;
D O I：
10.1063/1.4968541
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature-and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k.p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga, In) As and Ga(As, Sb) quantum wells. Published by AIP Publishing.
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收藏
页数：6
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