Fabrication of luminescent nanostructures by electron-beam direct writing of PMMA resist

被引：8

作者：

Barrios, C. A. ^{[1
]}

Carrasco, S. ^{[2
]}

Canalejas-Tejero, V. ^{[1
]}

Lopez-Romero, D. ^{[1
]}

Navarro-Villoslada, F. ^{[2
]}

Moreno-Bondi, M. C. ^{[2
]}

Fierro, J. L. G. ^{[3
]}

Capel-Sanchez, M. C. ^{[3
]}

机构：

[1] Univ Politecn Madrid, CEI Moncloa, ISOM, E-28040 Madrid, Spain

[2] Univ Complutense, CEI Moncloa, Dept Analyt Chem, Optochem Sensors & Appl Photochem Grp GSOLFA, E-28040 Madrid, Spain

[3] CSIC, Inst Catalisis & Petroleoquim, Madrid, Spain

来源：

MATERIALS LETTERS | 2012年 / 88卷

关键词：

Organic luminiscent films; Nanophotonics; Nanotechnology; Electron-beam lithography; Organic resists; Poly(methylmethacrylate);

D O I：

10.1016/j.matlet.2012.08.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the conversion of non-luminescent conventional poly(methylmethacrylate) (PMMA)based electron-beam resists into luminescent materials when used as negative-tone resists, that is, when exposed to high electron irradiation doses. Raman spectroscopy reveals the chemical transformation induced by electron irradiation which is responsible for the observed luminescence in the visible (blue) region. The emission intensity from exposed PMMA-based patterns can be controlled by the electron irradiation dose employed to create them. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：93 / 96

页数：4

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