Comparison on the structure and exchange bias in Co/MnPt and MnPt/Co polycrystalline films on glass substrates

被引：4

作者：

Chang, H. W. ^{[1
]}

Yuan, F. T. ^{[2
]}

Yeh, P. Y. ^{[3
]}

Chen, Y. C. ^{[3
]}

Lai, Y. L. ^{[3
]}

Pan, P. H. ^{[3
]}

Wang, C. R. ^{[3
]}

Horng, Lance ^{[4
]}

Chang, W. C. ^{[1
]}

机构：

[1] Natl Chung Cheng Univ, Dept Phys, Chiayi 621, Taiwan

[2] iSentek Inc, Adv Sensor Lab, New Taipei 22101, Taiwan

[3] Tunghai Univ, Dept Appl Phys, Taichung 407, Taiwan

[4] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

来源：

AIP ADVANCES | 2019年 / 9卷 / 03期

关键词：

VALVE THERMAL-STABILITY; SPIN VALVES; MAGNETORESISTANCE; INTERDIFFUSION;

D O I：

10.1063/1.5079890

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Structure and magnetic properties of sputter-prepared Co(5 nm)/MnPt(20 nm) and MnPt/Co polycrystalline films with various annealing temperatures (T) have been compared. XRD and TEM analysis show that MnPt is more compressive in film plane for Co/MnPt than MnPt/Co at as-deposited state. Large H-E of 464-560 Oe are attained in two series films through proper thermal process of post annealing and cooling in external magnetic field. The increase of H-E with T is mainly dominated by the ordering degree of MnPt layer and the roughness of the interface. As compared to MnPt/Co film (T = 250 degrees C), Co/MnPt film with more compressive in film plane exhibits L1(0)-ordering, the onset of stress release, and the optimized H-E at lower T = 200 degrees C. Higher H-E for MnPt/Co film at T = 250 degrees C (560 Oe) than Co/MnPt film T = 200 degrees C (464 Oe) might be related to grain growth for L1(0) phase. Nevertheless, higher annealing temperature leads to the interdiffusion, the roughened surface and therefore the decrease of H-E and H-c. This study provides useful information to fabricate exchange-bias system with L1(0)-MnPt as an antiferromagnetic layer. (C) 2019 Author(s).

引用

页数：5

共 19 条

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