C59N on silicon surfaces:: monomers, dimers and multilayers

被引：0
作者：
Butcher, MJ [1 ]
Jones, FH [1 ]
Beton, PH [1 ]
Moriarty, P [1 ]
Prassides, K [1 ]
Tagmatarchis, N [1 ]
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
来源：
ELECTRONIC PROPERTIES OF NOVEL MATERIALS - SCIENCE AND TECHNOLOGY OF MOLECULAR NANOSTRUCTURES | 1999年 / 486卷
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D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have investigated the adsorption of C59N on the Si(111)-7x7 surfaces using ultra-high vacuum scanning tunnelling microscopy. For coverages of C59N close to a monolayer a disordered layer is adsorbed directly on the Si surface. Following the deposition of more C59N small islands are formed indicating that C59N may diffuse on the adsorbed monolayer. There is some evidence for hexagonal ordering in the islands. The higher adsorbed layers may be desorbed by annealing at similar to 400 degrees C leaving a C59N monolayer. We also discuss the deposition of C59N and C-60 on this annealed monolayer.
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页码：165 / 169
页数：5
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