Low temperature direct silicon wafer bonding using argon activation

被引：11
作者：
Bower, RW
Chin, FYJ
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 5A期
关键词：
low temperature direct silicon wafer bonding; surface activation; plasma; argon; voids; gas bubbles;
D O I：
10.1143/JJAP.36.L527
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have observed that silicon surfaces activated in an Ar plasma form very strong bonds after a low temperature anneal. However, voids formed by Ar gas bubbles develop during the annealing process. This work provides insight into generalized plasma assisted bonding of material surfaces used in micro-(electronic/optical/mechanical) devices.
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页码：L527 / L528
页数：2
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