Bandwidth enhancement of three-device Doherty power amplifier based on symmetric devices

被引：4

作者：

Liu, Guohua ^{[1
]}

Cheng, Zhiqun ^{[1
,2
]}

Zhang, Ming ^{[1
]}

Chen, Shichang ^{[1
]}

Gao, Steven ^{[3
]}

机构：

[1] Hangzhou Dianzi Univ, Educ Minist, Key Lab RF Circuit & Syst, Hangzhou 310018, Zhejiang, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Beijing, Peoples R China

[3] Univ Kent, Sch Engn & Digital Arts, Canterbury, Kent, England

来源：

IEICE ELECTRONICS EXPRESS | 2018年 / 15卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Doherty power amplifier; broadband; drain efficiency; three-device; symmetric devices; EFFICIENCY;

D O I：

10.1587/elex.15.20171222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a method for extending the bandwidth of a three-device Doherty power amplifier (DPA) based on symmetric devices. lambda/4 transmission lines are inserted between each peaking amplifier output and carrier amplifier output to compensate load impedance of carrier amplifier. In order to achieve perfect load modulation, carrier amplifier output circuit total electrical length is designed to 90 degrees, and the peak amplifier output total electrical length is designed to 180 degrees. The proposed method is demonstrated by designing a three-device broadband DPA using three 10-W packaged GaN HEMT devices. Measurement results show that over 40% drain efficiency is achieved at 9-dB back-off power, over the frequency band of 1.45-2.35 GHz, accounting for 46% fractional bandwidth.

引用

页数：10

共 50 条

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