Fabrication of triangular nanochannels using the collapse of hydrogen silsesquioxane resists

被引:18
作者
Choi, Sookyung [1 ]
Yan, Minjun
Adesida, Ilesanmi
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.3006322
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report a simple method to fabricate nanometer-scale channels using hydrogen silsesquioxane (HSQ) resists. The collapse of high-aspect-ratio structures during the rinse and drying steps results in self-formed enclosed triangular-shaped channels. Using electron-beam lithography, dense arrays of HSQ triangular nanochannels were fabricated with high precision. This approach provides significant flexibility in design and simplicity in processing. We also show that the properties of HSQ resists are well suited for the fabrication of buried nanochannel structures. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3006322].
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页数:3
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