High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors

被引：19

作者：

Al Tahtamouni, T. M. ^{[1
]}

Lin, J. Y. ^{[2
]}

Jiang, H. X. ^{[2
]}

机构：

[1] Yarmouk Univ, Dept Phys, Irbid 21163, Jordan

[2] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 19期

关键词：

TIME-RESOLVED PHOTOLUMINESCENCE; CHEMICAL-VAPOR-DEPOSITION; THREADING DISLOCATIONS; PERFORMANCE; MECHANISM;

D O I：

10.1063/1.4766732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality AlN epilayers were grown on SiC substrates using double layer AlN buffers growth method by metal organic chemical vapor deposition and exploited as active deep ultraviolet optoelectronic materials through the demonstration of AlN Schottky barrier photodetectors. The grown AlN epilayers have smooth surfaces, low etch-pit density, narrow width of x-ray rocking curves, and strong band edge photoluminescence emission with low impurity emissions. AlN Schottky photodetectors are shown to possess outstanding features including extremely low dark current and high breakdown voltage. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766732]

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页数：4

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