Low temperature thermal annealing effects in bulk and epitaxial CdxHg1-xTe

被引：10
作者：
Capper, P
Maxey, CD
Jones, CL
Gower, JE
O'Keefe, ES
Shaw, D
机构：
[1] GEC Marconi Infra Red Ltd, Southampton SO15 0EG, Hants, England
[2] Univ Hull, Dept Phys, Hull HU6 7RX, N Humberside, England
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 06期
关键词：
annealing; CdHgTe; defects; interdiffusion;
D O I：
10.1007/s11664-999-0047-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low temperature thermal treatments of CdHgTe, normally in the presence of mercury vapor, are still used on both bulk samples and single and multi-layer epitaxial layers to modify or control the electrical properties. This paper reviews the recent literature reports in this area and develops the existing model to explain certain features of the p to n conversion process. A brief update on compositional interdiffusion at low temperatures is given which shows significant disagreement within literature values. In addition, the paper will describe and comment on some as yet unexplained results (interdiffusion and electrical behavior) following low temperature treatments in both liquid phase and metalorganic vapor phase epitaxial (LPE and MOVPE) layers.
引用
收藏
页码：637 / 648
页数：12
相关论文
共 58 条
  • [1] Two stream diffusion of Hg into CdTe
    Ahmed, MU
    Jones, ED
    Mullin, JB
    Stewart, NM
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 161 (1-4) : 223 - 228
  • [2] Arrhenius results for the diffusion of Hg into CdTe
    Ahmed, MU
    Jones, ED
    Mullin, JB
    Stewart, NM
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 1141 - 1147
  • [3] GROWTH METHOD, COMPOSITION, AND DEFECT STRUCTURE DEPENDENCE OF MERCURY DIFFUSION IN CDXHG1-XTE
    ARCHER, NA
    PALFREY, HD
    WILLOUGHBY, AFW
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (08) : 967 - 971
  • [4] HG0.8CD0.2TE NATIVE DEFECTS - DENSITIES AND DOPANT PROPERTIES
    BERDING, MA
    VANSCHILFGAARDE, M
    SHER, A
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (08) : 1005 - 1010
  • [5] 1ST PRINCIPLES CALCULATION OF NATIVE DEFECT DENSITIES IN HG0.8CD0.2TE
    BERDING, MA
    VANSCHILFGAARDE, M
    SHER, A
    [J]. PHYSICAL REVIEW B, 1994, 50 (03) : 1519 - 1534
  • [6] DEFECT MODELING STUDIES IN HGCDTE AND CDTE
    BERDING, MA
    SHER, A
    VANSCHILFGAARDE, M
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (09) : 1127 - 1135
  • [7] BOGOBOYASHCHII VV, 1985, SOV PHYS SEMICOND+, V19, P505
  • [8] Boltaks B.I., 1963, Diffusion in Semiconductors
  • [9] ELECTRICAL-PROPERTIES AND ANNEALING BEHAVIOR OF CDXHG1-XTE GROWN BY LPE AND MOVPE
    CAPPER, P
    EASTON, BC
    WHIFFIN, PAC
    MAXEY, CD
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) : 508 - 514
  • [10] Matrix and impurity element distributions in CdHgTe (CMT) and (Cd,Zn)(Te,Se) compounds by chemical analysis
    Capper, P
    OKeefe, ES
    Maxey, C
    Dutton, D
    Mackett, P
    Butler, C
    Gale, I
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 161 (1-4) : 104 - 118
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