Vibrational evidence for a percolative behavior in Zn1-xBexSe -: art. no. 035213

被引：41
作者：
Pagès, O
Ajjoun, M
Bormann, D
Chauvet, C
Tournié, E
Faurie, JP
机构：
[1] Inst Phys, F-57078 Metz, France
[2] Lab Physicochim Interfaces & Applicat, F-62037 Lens, France
[3] Ctr Rech Heteroepitaxie & Ses Applicat, F-06560 Valbonne, France
来源：
PHYSICAL REVIEW B | 2002年 / 65卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.65.035213
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present an atypical multimode behavior in the Raman spectra recorded with Zn1-xBexSe, which belongs to the new class of ternary semiconductor alloys made of materials with highly contrasted bond stiffness. We observe the activation of a strong extra BeSe-like optical mode for x between the percolation thresholds of the Be-Se and Zn-Se bonds. This extra mode is attributed to Be-Se bonds within the quasicontinuous Be-rich hardlike cluster that forms above the percolation threshold. Our observations can be quantitatively explained in terms of a generalized version of the standard modified-random-element-isodisplacement model.
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页码：1 / 6
页数：6
相关论文
共 25 条
[1]  
[Anonymous], 2018, INTRO PERCOLATION TH
[2]   Localization and percolation in semiconductor alloys: GaAsN vs GaAsP [J].
Bellaiche, L ;
Wei, SH ;
Zunger, A .
PHYSICAL REVIEW B, 1996, 54 (24) :17568-17576
[3]   APPLICATION OF A MODIFIED RANDOM-ELEMENT-ISODISPLACEMENT MODEL TO LONG-WAVELENGTH OPTIC PHONONS OF MIXED CRYSTALS [J].
CHANG, IF ;
MITRA, SS .
PHYSICAL REVIEW, 1968, 172 (03) :924-&
[4]   EFFECTS OF CONFIGURATION INTERACTION ON INTENSITIES AND PHASE SHIFTS [J].
FANO, U .
PHYSICAL REVIEW, 1961, 124 (06) :1866-&
[5]   Raman and photoluminescence investigations of disorder in ZnSe films deposited on n-GaAs [J].
Ganguli, T ;
Ingale, A .
PHYSICAL REVIEW B, 1999, 60 (16) :11618-11623
[6]  
GEURTS J, 1998, P 24 INT C PHYS SEM, P1
[7]   Optical-phonon behavior in Ga1-xInxAs:: The role of microscopic strains and ionic plasmon coupling [J].
Groenen, J ;
Carles, R ;
Landa, G ;
Guerret-Piecourt, C ;
Fontaine, C ;
Gendry, M .
PHYSICAL REVIEW B, 1998, 58 (16) :10452-10462
[8]  
Hon D. T., 1973, Applied Physics, V1, P241, DOI 10.1007/BF00889771
[9]   Phonon modes of ZnS1-xTex alloys epitaxially grown on (100) GaAs substrates [J].
Jin, CX ;
Ling, Z ;
Wang, DH ;
Huang, DM ;
Hou, XY ;
Wang, X .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3465-3467
[10]   Percolation of carriers through low potential channels in thick AlxGa1-xAs (x<0.35) barriers [J].
Kim, DS ;
Ko, HS ;
Kim, YM ;
Rhee, SJ ;
Hohng, SC ;
Yee, YH ;
Kim, WS ;
Woo, JC ;
Choi, HJ ;
Ihm, J ;
Woo, DH ;
Kang, KN .
PHYSICAL REVIEW B, 1996, 54 (20) :14580-14588
123